Examining Interfacial Diffuse Phonon Scattering Through Transient Thermoreflectance Measurements of Thermal Boundary Conductance

Today’s electronic and optoelectronic devices are plagued by heat transfer issues. As device dimensions shrink and operating frequencies increase, ever-increasing amounts of thermal energy are being generated in smaller and smaller volumes. As devices shrink to length scales on the order of carrier mean free paths, thermal transport is no longer dictated by the thermal properties of the materials comprising the devices, but rather the transport of energy across the interfaces between adjacent materials in the devices. In this paper, current theories and experiments concerning phonon scattering processes driving thermal boundary conductance hBD are reviewed. Experimental studies of thermal boundary conductance conducted with the transient thermoreflectance technique challenging specific assumptions about phonon scattering during thermal boundary conductance are presented. To examine the effects of atomic mixing at the interface on hBD, a series of Cr/Si samples was fabricated subject to different deposition conditions. The varying degrees of atomic mixing were measured with Auger electron spectroscopy. Phonon scattering phenomena in the presence of interfacial mixing were observed with the trends in the Cr/Si hBD. The experimental results are reviewed and a virtual crystal diffuse mismatch model is presented to add insight into the effect of interatomic mixing at the interface. The assumption that phonons can only transmit energy across the interface by scattering with a phonon of the same frequency—i.e., elastic scattering, can lead to underpredictions of hBD by almost an order of magnitude. To examine the effects of inelastic scattering on hBD, a series of metal/dielectric interfaces with a wide range of vibrational similarity is studied at temperatures above and around materials’ Debye temperatures. Inelastic scattering is observed and new models are developed to predict hBD and its relative dependency on elastic and inelastic scattering events. DOI: 10.1115/1.3072928